Journal
PHYSICAL REVIEW B
Volume 87, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.144422
Keywords
-
Funding
- National Science Foundation [DMR-0548182, DMR-1006725]
- U.S. Department of Energy (DOE) [DE-SC0001878]
- Texas Advanced Computing Center
Ask authors/readers for more resources
Room-temperature ferromagnetic insulating behavior is demonstrated in cobalt-substituted SrTiO3 grown on silicon. Ferromagnetism is exhibited by films with a composition of 30-40% cobalt. Measurements of stoichiometry by x-ray photoelectron spectroscopy indicate Co replacing Ti with the concomitant creation of an approximately equal number of oxygen vacancies as the cobalt ions. First-principles modeling of this system shows that the observed local magnetic moment originates from a cobalt-oxygen vacancy complex with Co in the +2 valence state. The calculations also confirm the insulating nature of the material. The ability to deposit a room-temperature ferromagnetic insulator onto silicon may be useful for certain spintronics applications such as spin filters for spin-injection contacts.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available