Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

(2013) W. Y. Mak et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

(2012) J. C. H. Chen et al.   APPLIED PHYSICS LETTERS

Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

(2012) A. M. See et al.   PHYSICAL REVIEW LETTERS

Impact of Disorder on the5/2Fractional Quantum Hall State

(2011) W. Pan et al.   PHYSICAL REVIEW LETTERS

AlGaAs/GaAs single electron transistor fabricated without modulation doping

(2010) A. M. See et al.   APPLIED PHYSICS LETTERS

Scattering mechanism in modulation-doped shallow two-dimensional electron gases

(2010) D. Laroche et al.   APPLIED PHYSICS LETTERS

Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures

(2010) W. Y. Mak et al.   APPLIED PHYSICS LETTERS

Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires

(2009) F. Sfigakis et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas

(2009) S. J. MacLeod et al.   PHYSICAL REVIEW B

MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs

(2008) V. Umansky et al.   JOURNAL OF CRYSTAL GROWTH

Experimental studies of the fractional quantum Hall effect in the first excited Landau level

(2008) W. Pan et al.   PHYSICAL REVIEW B

Activation gaps of fractional quantum Hall effect in the second Landau level

(2008) H. C. Choi et al.   PHYSICAL REVIEW B