High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

Quantum Behavior of Graphene Transistors near the Scaling Limit

(2012) Yanqing Wu et al.   NANO LETTERS

Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization

(2011) S. Forti et al.   PHYSICAL REVIEW B

Graphene on Ir(111) characterized by angle-resolved photoemission

(2011) Marko Kralj et al.   PHYSICAL REVIEW B

Thermal Expansion of Supported and Freestanding Graphene: Lattice Constant versus Interatomic Distance

(2011) Monica Pozzo et al.   PHYSICAL REVIEW LETTERS

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Electron-phonon coupling in potassium-doped graphene: Angle-resolved photoemission spectroscopy

(2010) M. Bianchi et al.   PHYSICAL REVIEW B

Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities

(2010) Dmitri K. Efetov et al.   PHYSICAL REVIEW LETTERS

Electron–phonon coupling at surfaces and interfaces

(2009) Ph Hofmann et al.   NEW JOURNAL OF PHYSICS

Growth of graphene on Ir(111)

(2009) Johann Coraux et al.   NEW JOURNAL OF PHYSICS

Hole dynamics in a two-dimensional spin-orbit coupled electron system: Theoretical and experimental study of the Au(111) surface state

(2009) I. A. Nechaev et al.   PHYSICAL REVIEW B

Dirac Cones and Minigaps for Graphene on Ir(111)

(2009) I. Pletikosić et al.   PHYSICAL REVIEW LETTERS

n-Type Behavior of Graphene Supported on Si/SiO2 Substrates

(2008) Hugo E. Romero et al.   ACS Nano

Surface-sensitive conductance measurements

(2008) Ph Hofmann et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS