Journal
PHYSICAL REVIEW B
Volume 85, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.144406
Keywords
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Funding
- National Natural Science Foundation of China [11075197, 10974119, 50902147]
- Shanghai Pujiang Talent Plan [10PJ1412100]
- National Basic Research Program of China [2010CB934503, 2010CB832903]
- NSERC
- CFI
- CRC
- OIT
- NRC
- CIHR
- University of Saskatchewan
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The mechanism of ferromagnetism in carbon-based materials, which contain only s and p electrons in contrast to traditional ferromagnets based on 3d or 4f electrons, is important but unclear. Here, by means of near-edge x-ray-absorption fine-structure (NEXAFS) and bulk magnetization measurements, we demonstrate that the origin of ferromagnetism in C-12(+) ion implanted highly oriented pyrolytic graphite (HOPG) is closely correlated with the defect electronic states near the Fermi level. The angle-dependent NEXAFS spectra imply that these defect-induced electronic states are extended on the graphite basal plane. We attribute the origin of electronic states to the vacancy defects created under C-12(+) ion implantation. The intensity of the observed ferromagnetism in HOPG is sensitive to the defect density, and the narrow implantation dosage window that produces ferromagnetism is optimized.
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