4.6 Article

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

Journal

PHYSICAL REVIEW B
Volume 86, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.165308

Keywords

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Funding

  1. Netherlands Foundation for Fundamental Research on Matter (FOM)

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The contribution of the spin accumulation to tunneling anisotropy in Si/Al2O3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.

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