Journal
PHYSICAL REVIEW B
Volume 85, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.235427
Keywords
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Funding
- EPSRC [EP/H02350X/1]
- EPSRC [EP/H02350X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H02350X/1] Funding Source: researchfish
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Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs. We describe a density-matrix transport model that is designed to be more general than those in previous studies and to require less a priori knowledge of electronic band structure, allowing its use in semiautomated design procedures. The basis of the model includes all states involved in interperiod transport, and our steady-state solution extends beyond the rotating-wave approximation by including dc and counterpropagating terms. We simulate the potential performance of bound-to-continuum Ge/SiGe QCLs and find that devices with 4-5-nm-thick barriers give the highest simulated optical gain. We also examine the effects of interdiffusion between Ge and SiGe layers; we show that if it is taken into account in the design, interdiffusion lengths of up to 1.5 nm do not significantly affect the simulated device performance.
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