Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1−xN/GaN heterostructures: A possible explanation of defect insensitivity

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

(2010) Lin Zhou et al.   APPLIED PHYSICS LETTERS

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

(2010) Huaping Lei et al.   APPLIED PHYSICS LETTERS

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

(2010) Ondrej L. Krivanek et al.   NATURE

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

(2009) S.-L. Sahonta et al.   APPLIED PHYSICS LETTERS

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

(2009) Z. L. Miao et al.   APPLIED PHYSICS LETTERS

Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy

(2009) Th. Kehagias et al.   APPLIED PHYSICS LETTERS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS