Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3
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Title
Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 84, Issue 7, Pages -
Publisher
American Physical Society (APS)
Online
2011-08-18
DOI
10.1103/physrevb.84.075335
References
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Related references
Note: Only part of the references are listed.- Molecular Beam Epitaxial Growth of Topological Insulators
- (2011) Xi Chen et al. ADVANCED MATERIALS
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- (2010) L. Andrew Wray et al. Nature Physics
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- Superconductivity inCuxBi2Se3and its Implications for Pairing in the Undoped Topological Insulator
- (2010) Y. S. Hor et al. PHYSICAL REVIEW LETTERS
- Colloquium: Topological insulators
- (2010) M. Z. Hasan et al. REVIEWS OF MODERN PHYSICS
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- (2010) R. Yu et al. SCIENCE
- Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
- (2009) Y. Xia et al. Nature Physics
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
- (2009) Haijun Zhang et al. Nature Physics
- p-typeBi2Se3for topological insulator and low-temperature thermoelectric applications
- (2009) Y. S. Hor et al. PHYSICAL REVIEW B
- Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3
- (2009) D. Hsieh et al. PHYSICAL REVIEW LETTERS
- Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
- (2009) Y. L. Chen et al. SCIENCE
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