Journal
PHYSICAL REVIEW B
Volume 83, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.165438
Keywords
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Funding
- DARPA as part of the University Photonics Centers
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Saturation of the enhanced second harmonic generation (SHG) based on the localized fields confined in a nanoscale periodic, GaAs-filled, plasmonic structure is presented. The SHG saturates at high pump intensities due to three-photon absorption and the resultant free-carrier absorption. Free carriers are monitored by photoluminescence (PL). A fifth power dependence of the PL is observed at 297 K, which results from the three photon absorption along with a transition from nonradiative carrier recombination at the defected GaAs surface at low excitation to bimolecular recombination at high carrier concentrations.
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