Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
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Title
Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 84, Issue 23, Pages -
Publisher
American Physical Society (APS)
Online
2011-12-03
DOI
10.1103/physrevb.84.235302
References
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Related references
Note: Only part of the references are listed.- Effect of edge threading dislocations on the electronic structure of InN
- (2011) E. Kalesaki et al. APPLIED PHYSICS LETTERS
- Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN
- (2011) Nate Miller et al. PHYSICAL REVIEW B
- Identification of the main contributions to the conductivity of epitaxial InN
- (2011) T. A. Komissarova et al. PHYSICAL REVIEW B
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2
- (2010) Mark E. White et al. Applied Physics Express
- The effects of cap layers on electrical properties of indium nitride films
- (2010) Wei Liu et al. APPLIED PHYSICS LETTERS
- High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration
- (2010) Oliver Bierwagen et al. APPLIED PHYSICS LETTERS
- Hole transport and photoluminescence in Mg-doped InN
- (2010) N. Miller et al. JOURNAL OF APPLIED PHYSICS
- The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
- (2009) Chad S. Gallinat et al. APPLIED PHYSICS LETTERS
- Depletion of surface accumulation charge in InN by anodic oxidation
- (2009) A. Denisenko et al. JOURNAL OF APPLIED PHYSICS
- Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy
- (2009) M. E. White et al. JOURNAL OF APPLIED PHYSICS
- Unintentional conductivity of indium nitride: transport modelling and microscopic origins
- (2009) P D C King et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Electrical and electrothermal transport in InN: The roles of defects
- (2009) N. Miller et al. PHYSICA B-CONDENSED MATTER
- Role of impurities and dislocations for the unintentional n-type conductivity in InN
- (2009) V. Darakchieva et al. PHYSICA B-CONDENSED MATTER
- Causes of incorrect carrier-type identification in van der Pauw–Hall measurements
- (2008) Oliver Bierwagen et al. APPLIED PHYSICS LETTERS
- Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire
- (2008) M. E. White et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
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