Journal
PHYSICAL REVIEW B
Volume 81, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.075311
Keywords
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Funding
- Swedish Research Council
- Royal Swedish Academy of Sciences
- UCSD
- UC Academic Senate
- U.S.- Israel Binational Science Foundation
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We consider a model for a spin field-effect molecular transistor, where a directed pure spin current is controlled by an external electric field. Inelastic scattering effects of such molecular device are discussed within a framework of full counting statistics for a multilevel molecular system. We propose that the heating of the molecular junction can be controlled by external electric and magnetic fields. Characteristic features of the model are demonstrated by numerical calculations.
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