Journal
PHYSICAL REVIEW B
Volume 81, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.144422
Keywords
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Funding
- Creation and control of spin current [19048004]
- MEXT, Japan [20760005]
- Strategic Japanese-German Cooperative Program
- Grants-in-Aid for Scientific Research [20760005] Funding Source: KAKEN
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The Fermi level (E-F) control of half-metallic Heusler alloy Co2MnSi by Al-doping was challenged in magnetic tunnel junctions with a Co2MnAlxSi1-x (CMAS) electrode. The observed bias voltage dependence on tunneling conductance (G-V curves) clearly shows a shift in E-F toward the center of the half-metallic gap with x, which showed excellent agreement with our first-principles calculations. However, the ratio of tunnel magnetoresistance (TMR) at 10 K to that at room temperature does not exhibit a remarkable change with x. The weak exchange energy at the CMAS interface may be the origin for the large temperature dependence of the TMR ratio.
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