Journal
PHYSICAL REVIEW B
Volume 79, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.115437
Keywords
atomic force microscopy; elemental semiconductors; nanostructured materials; silicon; sputtering; surface morphology; surface roughness; surface treatment
Funding
- MEC (Spain) [FIS2006-12253-C06-01]
- UC3M/CAM (Spain) [CCG06-UC3M/ESP-0668]
- CAM (Spain) [S-0505/ESP-0158]
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The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents alpha(n)=0.76 +/- 0.04 and alpha(p)=0.41 +/- 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field (hydrodynamic) models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.
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