Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Title
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 79, Issue 20, Pages -
Publisher
American Physical Society (APS)
Online
2009-05-20
DOI
10.1103/physrevb.79.205316

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