Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy

Published 2009 View Full Article

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Title
Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 80, Issue 24, Pages -
Publisher
American Physical Society (APS)
Online
2009-12-15
DOI
10.1103/physrevb.80.245314
References
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