Journal
PHYSICAL REVIEW B
Volume 80, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.081203
Keywords
electron spin-lattice relaxation; gallium arsenide; III-V semiconductors; magnetic field effects; magnetic impurities; magnetic semiconductors; manganese; photoluminescence; semiconductor doping; spin dynamics; time resolved spectra
Funding
- Deutsche Forschungsgemeinschaft [436RUS113/958/0-1]
- Russian Foundation for Basic Research
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We study the electron-spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin-relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin-relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.
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