First-principles calculations of defects near a grain boundary in MgO

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Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

(2008) Vasil Yanev et al.   APPLIED PHYSICS LETTERS

Structure of and ion segregation to an alumina grain boundary: Implications for growth and creep

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Electron-trapping polycrystalline materials with negative electron affinity

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Atomic structure, electronic structure, and defect energetics in[001](310)Σ5grain boundaries ofSrTiO3andBaTiO3

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Disturbance of Tunneling Coherence by Oxygen Vacancy in EpitaxialFe/MgO/FeMagnetic Tunnel Junctions

(2008) G. X. Miao et al.   PHYSICAL REVIEW LETTERS

Defect Energy Levels in Density Functional Calculations: Alignment and Band Gap Problem

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