Article
Nanoscience & Nanotechnology
Nikesh Patel, H. Aruni Fonseka, Yunyan Zhang, Stephen Church, Ruqaiya Al-Abri, Ana Sanchez, Huiyun Liu, Patrick Parkinson
Summary: Bottom-up grown nanostructures often exhibit significant dimensional inhomogeneity, leading to variations in electronic properties. By applying a high-throughput characterization methodology to over 15,000 nanoskived sections of strained GaAsP/GaAs radial core/shell quantum well heterostructures, it is found that these heterostructures exhibit high emission uniformity. A highly strained core/shell nanowire design is shown to minimize the dependence of emission on the quantum well width variation.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
V. Ya. Aleshkin, A. O. Rudakov
Summary: The study focuses on the theoretical analysis of the recombination process of nonequilibrium charge carriers emitting plasmons in structures with different numbers of quantum wells, especially under conditions of inverse band population. It was found that an increase in the number of quantum wells leads to a slight increase in the average recombination probability.
Article
Physics, Applied
V. Ya. Aleshkin, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, V. V. Utochkin, M. A. Fadeev, G. Alymov, N. N. Mikhailov, S. A. Dvoretsky, F. Teppe, V. I. Gavrilenko, S. V. Morozov
Summary: The study provides a detailed theoretical analysis of nonradiative Auger recombination in narrow-gap HgCdTe quantum wells, proposing a microscopic model to calculate recombination rates and validating it against measurements. It evaluates different designs of HgCdTe/CdHgTe QWs for far-IR emitters, finding that moderate cadmium content in the QWs may favor lasing contrary to intuitive expectations. The efficiency of screening by free charge carriers contributes decisively to the suppression of Auger processes at low temperatures and high carrier concentrations.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Lun Li, Yuyang Wu, Xiaoyang Liu, Jiuming Liu, Hanzhi Ruan, Zhenghang Zhi, Yong Zhang, Puyang Huang, Yuchen Ji, Chenjia Tang, Yumeng Yang, Renchao Che, Xufeng Kou
Summary: Symmetry manipulation can effectively tailor the physical order in solid-state systems. In lattice-matched InSb/CdTe films, unidirectional magnetoresistance (UMR) is observed up to room temperature. The strong electric field in the heterojunction region results in a distinct sinusoidal UMR signal, with a nonreciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298K. Furthermore, efficient gate tuning of the rectification response is achieved, with a 40% enhancement in UMR amplitude. This study suggests that narrow-bandgap semiconductor-based hybrid systems with robust spin textures are suitable for controllable chiral spin-orbit applications.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Alexey M. Nadtochiy, Nikita Yu Gordeev, Anton A. Kharchenko, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Yury S. Berdnikov, Yuriy M. Shernyakov, Mikhail Maximov, Alexey E. Zhukov
Summary: The modal absorptions in laser-like heterostructures containing InAs self-assembled quantum dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied, with per-layer modal absorptions determined. The introduction of the layer gain constant allows for comparison of quantum heterostructures with different dimensionality, showing that the QWD layer gain constant significantly exceeds quantum well and quantum dot ones.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Sabbir A. Khan, Lukas Stampfer, Timo Mutas, Jung-Hyun Kang, Peter Krogstrup, Thomas S. Jespersen
Summary: Through studying the time-dependent growth of InSb nanowires, the conditions for synthesizing single-crystalline InSb nanocrosses by molecular beam epitaxy have been mapped out. Low-temperature electrical measurements of these structures exhibit quantized conductance and probe the spatial distribution of conducting channels. The structures show promise for realizing non-trivial topological states in multi-terminal Josephson junctions, especially with the new concept of shadow-epitaxy of patterned superconductors.
ADVANCED MATERIALS
(2021)
Article
Physics, Multidisciplinary
Somayeh Solgi, Sattar Mirzakuchaki, Morteza Sasani Ghamsari
Summary: This study optimized the design and parameters of InSb-based quantum-well laser through physical modeling and simulation, achieving light emission in the range of 5.40-6.48 μm. By investigating the influence of aluminum concentration variation and active region thickness on laser performance, the output power and characteristics of the proposed QW structures showed good similarity with reported grown samples. The study demonstrated that Auger recombination is accurately reflected in the proposed QWs.
EUROPEAN PHYSICAL JOURNAL PLUS
(2021)
Article
Multidisciplinary Sciences
Mahdi Hajlaoui, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, Gunther Springholz, Claus Michael Schneider, Stefan Cramm, Mirko Cinchetti
Summary: This study explores the buried quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures using extremely low-energy ARPES. The results show that due to high surface roughness, energy dispersion of quantum well states in cubic-GaN/AlN cannot be observed, while quantum well states in GaAs/AlGaAs are buried too deep to be detected by this technique. The flat surface of GaAs/AlGaAs samples allows for distinct features in momentum space, revealing band structure information of the topmost surface layer of the quantum well structure.
SCIENTIFIC REPORTS
(2021)
Article
Optics
A. O. Rudakov, V. Ya Aleshkin, V. Gavrilenko
Summary: This work focuses on the theoretical study of plasmon gain in HgTe/CdHgTe multi-quantum-well heterostructures. The study reveals the spectra of plasmons and plasmon gain in structures with 2-8 quantum wells under the condition of inverse band population. It demonstrates a nonmonotonic increase in plasmon gain with an increase in the number of quantum wells. Additionally, the dependence of the threshold concentration of nonequilibrium carriers for stimulated plasmon emission on the number of quantum wells in structures with 1-8 quantum wells has been investigated.
Article
Chemistry, Physical
Savas Delikanli, Onur Erdem, Furkan Isik, Hamed Dehghanpour Baruj, Farzan Shabani, Huseyin Bilge Yagci, Emek Goksu Durmusoglu, Hilmi Volkan Demir
Summary: Researchers demonstrated highly efficient amplified spontaneous emission (ASE) in solution using engineered CQWs heterostructures with low thresholds in red and green regions. The net modal gain of these CQWs is significantly higher than that of CQDs in solution, with gain cross sections two orders of magnitude larger than those of CQDs.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Junya Yaita, Koichi Fukuda, Atsushi Yamada, Takuya Iwasaki, Shu Nakaharai, Junji Kotani
Summary: The study identified the primary reason for the reduced electron mobility in QW GaN-HEMT and proposed a solution to alleviate the electric field and increase electron mobility. As a result, the electron mobility of the QW GaN-HEMT structure was significantly improved.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Optics
V. Ya Aleshkin, A. A. Dubinov, V. Gavrilenko, F. Teppe
Summary: The energy spectra of two-dimensional plasmons in HgTe/CdHgTe quantum wells have been calculated, taking into account the effect of different electron concentrations on the absorption coefficients of plasmons and the interaction between plasmons and optical phonons. It is shown that an increase in electron concentration leads to a decrease in the plasmon absorption coefficient, and probabilities for recombination via plasmon emission for nonequilibrium holes have been calculated. Threshold concentrations of nonequilibrium holes for plasmon amplification have been determined for various electron concentrations, with the presence of equilibrium electrons playing a significant role in reducing the threshold hole concentration required for amplification in the terahertz wavelength region.
Article
Nanoscience & Nanotechnology
Yige Yao, Yunke Zhu, An Hu, Yunan Gao
Summary: This work reveals the rich in-plane exciton dynamics of CdSe/CdSeS CQW heterostructures, showing that at high temperatures, the in-plane charge carrier transfer dominates the exciton dynamics. As the temperature decreases, the internal processes of the exciton fine-structure begin to compete with the transfer process and eventually dominate the dynamics. The competition between these processes is quantitatively analyzed using a transfer-coupled three-state model, and the center-of-mass motion of excitons is experimentally resolved. This study provides new insight into exciton dynamics in CQWs and demonstrates their usefulness as a platform for studying exciton physics in various in-plane 2D semiconductor heterostructures.
Article
Nanoscience & Nanotechnology
Jingwei Mu, Shaoyun Huang, Ji-Yin Wang, Guang-Yao Huang, Xuming Wang, H. Q. Xu
Summary: In this study, the Zeeman splitting and g-factor tensor in few-electron quantum dots formed in narrow bandgap InSb nanowires were measured using Schottky barriers and different spatially orientated magnetic fields. The anisotropic and level-dependent g-factor tensor was attributed to strong spin-orbit interaction and asymmetric quantum confinement potentials in the quantum dots. Additionally, the principal values and axis orientations of the g-factor tensors were successfully determined by measuring rotations of a magnetic field in orthogonal planes in an InSb nanowire quantum dot.
Article
Chemistry, Multidisciplinary
Omer Arif, Valentina Zannier, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba
Summary: The study presents the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot on Si substrates using chemical beam epitaxy. By systematically varying the growth parameters, the researchers found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment, allowing for control over the thickness of the InAs shell around the InSb quantum dot. Additionally, the study highlights the importance of In diffusion paths and the interplay of growth mechanisms in determining the final shape of the nanowires.
Article
Chemistry, Multidisciplinary
Michael Saliba, Simon M. Wood, Jay B. Patel, Pabitra K. Nayak, Jian Huang, Jack A. Alexander-Webber, Bernard Wenger, Samuel D. Stranks, Maximilian T. Hoerantner, Jacob Tse-Wei Wang, Robin J. Nicholas, Laura M. Herz, Michael B. Johnston, Stephen M. Morris, Henry J. Snaith, Moritz K. Riede
ADVANCED MATERIALS
(2016)
Article
Chemistry, Multidisciplinary
Jacob Tse-Wei Wang, Zhiping Wang, Sandeep Pathak, Wei Zhang, Dane W. deQuilettes, Florencia Wisnivesky-Rocca-Rivarola, Jian Huang, Pabitra K. Nayak, Jay B. Patel, Hanis A. Mohd Yusof, Yana Vaynzof, Rui Zhu, Ivan Ramirez, Jin Zhang, Caterina Ducati, Chris Grovenor, Michael B. Johnston, David S. Ginger, Robin J. Nicholas, Henry J. Snaith
ENERGY & ENVIRONMENTAL SCIENCE
(2016)
Article
Chemistry, Multidisciplinary
Krzysztof Galkowski, Anatolie Mitioglu, Atsuhiko Miyata, Paulina Plochocka, Oliver Portugall, Giles E. Eperon, Jacob Tse-Wei Wang, Thomas Stergiopoulos, Samuel D. Stranks, Henry J. Snaith, Robin J. Nicholas
ENERGY & ENVIRONMENTAL SCIENCE
(2016)
Article
Physics, Multidisciplinary
Mitchell D. Anderson, Meghan N. Beattie, Jack A. Alexander-Webber, Robin J. Nicholas, James M. Fraser
NEW JOURNAL OF PHYSICS
(2016)
Article
Chemistry, Physical
Severin N. Habisreutinger, Nakita K. Noel, Henry J. Snaith, Robin J. Nicholas
ADVANCED ENERGY MATERIALS
(2017)
Article
Chemistry, Physical
Severin N. Habisreutinger, Robin J. Nicholas, Henry J. Snaith
ADVANCED ENERGY MATERIALS
(2017)
Article
Multidisciplinary Sciences
Xu Wang, Jack A. Alexander-Webber, Wei Jia, Benjamin P. L. Reid, Samuel D. Stranks, Mark J. Holmes, Christopher C. S. Chan, Chaoyong Deng, Robin J. Nicholas, Robert A. Taylor
SCIENTIFIC REPORTS
(2016)
Article
Chemistry, Multidisciplinary
Nakita K. Noel, Severin N. Habisreutinger, Bernard Wenger, Matthew T. Klug, Maximilian T. Horantner, Michael B. Johnston, Robin J. Nicholas, David T. Moore, Henry J. Snaith
ENERGY & ENVIRONMENTAL SCIENCE
(2017)
Article
Physics, Condensed Matter
J. A. Alexander-Webber, J. Huang, J. Beilsten-Edmands, P. Cermak, C. Drasar, R. J. Nicholas, A. I. Coldea
JOURNAL OF PHYSICS-CONDENSED MATTER
(2018)
Article
Multidisciplinary Sciences
J. A. Alexander-Webber, J. Huang, D. K. Maude, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, R. Yakimova, R. J. Nicholas
SCIENTIFIC REPORTS
(2016)
Article
Nanoscience & Nanotechnology
Giulio Mazzotta, Markus Dollmann, Severin N. Habisreutinger, M. Greyson Christoforo, Zhiping Wang, Henry J. Snaith, Moritz K. Riede, Robin J. Nicholas
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Chemistry, Physical
Laura Schade, Adam D. Wright, Roger D. Johnson, Markus Dollmann, Bernard Wenger, Pabitra K. Nayak, Dharmalingam Prabhakaran, Laura M. Herz, Robin Nicholas, Henry J. Snaith, Paolo G. Radaelli
ACS ENERGY LETTERS
(2019)
Article
Nanoscience & Nanotechnology
Xiaxia Liao, Severin N. Habisreutinger, Sven Wiesner, Golnaz Sadoughi, Daniel Abou-Ras, Marc A. Gluba, Regan G. Wilks, Roberto Felix, Marin Rusu, Robin J. Nicholas, Henry J. Snaith, Marcus Baer
Summary: The study reveals significant chemical interaction at the MoO3/MAPbI(3-x)Cl(x) interface, leading to decomposition of the perovskite and accumulation of PbI2 on the MoO3 cover layer. New compounds such as PbMoO4, PbN2O2, and PbO are formed as a result of the decomposition, suggesting that the direct MoO3/MAPbI(3-x)Cl(x) interface may be inherently unstable. These findings help explain the low power conversion efficiencies of metal halide perovskite solar cells using MoO3 as a hole-transport material with direct contact to perovskite.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Energy & Fuels
Bernd K. Sturdza, Andreas E. Lauritzen, Suer Zhou, Andre J. Bennett, Joshua Form, M. Greyson Christoforo, Robert M. Dalgliesh, Henry J. Snaith, Moritz K. Riede, Robin J. Nicholas
Summary: We present process improvements for the fabrication of single-walled carbon nanotube ethylene-vinyl acetate transparent conductive films. These films demonstrate high resilience against folding and can be used as a replacement for the external dopant in perovskite solar cells, resulting in improved efficiency. The adapted process reduces material cost and significantly improves the conductivity-to-optical conductivity ratio. Additionally, we found a positive correlation between the microstructure of the films and their conductivity performance.
Article
Nanoscience & Nanotechnology
Severin N. Habisreutinger, David P. McMeekin, Henry J. Snaith, Robin J. Nicholas
