Journal
PHYSICAL REVIEW B
Volume 79, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.165208
Keywords
annealing; chromium; ferromagnetic materials; indium compounds; magnetic moments; magnetic semiconductors; magnetic thin films; point contacts; semiconductor thin films; spin polarised transport
Funding
- National Science Foundation [DMR-06044823, ECS-0239058]
- DARPA through ONR [N0001402-1-0886]
- ONR [N00014-06-1-0616]
- NSF [ECCS-0725881]
- Institute for Materials Research at Wayne State University
- Jane and Frank Warchol Foundation
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We present evidence for spin-polarized charge carriers in In2O3 films. Both In2O3 and Cr doped In2O3 films exhibit room-temperature ferromagnetism after vacuum annealing, with a saturation moment reaching approximately 0.5 emu/cm(3) for the Cr doped samples. We used point contact Andreev reflection measurements to directly determine the spin polarization, which was found to be approximately 50%+/- 5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.
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