Journal
PHYSICAL REVIEW B
Volume 79, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.155426
Keywords
aluminium compounds; energy gap; gallium compounds; III-V semiconductors; melting; nanostructured materials; phase diagrams; segregation; surface energy; thermo-optical effects
Funding
- ANR PNANO MNEMS
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We report a theoretical investigation, at the nanoscale, free of any adjustable parameters, concerning the size, shape, composition, and segregation effects on the melting temperature and energy band gap of zinc-blende III-V semiconductors. The corresponding nanophase diagram is established. From it, the composition and segregation effects on the energy band gap of the ternary semiconducting nanoalloy are deduced. Moreover, the liquid surface energies for AlP, GaP, AlAs, and AlSb have been calculated (0.566 +/- 0.060, 0.510 +/- 0.060, 0.506 +/- 0.060 J/m(2), and 0.441 +/- 0.060 J/m(2), respectively). The information obtained in this study can be used to tune the thermo-optical properties of III-V nanomaterials in nano-optoelectronics.
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