Journal
PHYSICAL REVIEW B
Volume 79, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.121101
Keywords
electrical resistivity; electronic structure; indium compounds; insulating thin films; lanthanum compounds; MIM structures; reflectivity; strontium compounds
Funding
- MEXT of Japan
Ask authors/readers for more resources
By the microspectroscopic imaging of optical reflectivity for the La1-xSrxFeO3-delta thin film with indium-tin-oxide electrodes, we observed that the shape of the conducting area between two electrodes is reversibly varied with applied electric voltage pulses and that causes a repeatable change in the electrical resistance between the electrodes. These results can be explained by the oxygen-ion migration with applied electric field, which induces a variation in the distribution of the Fe4+ ions in the thin film.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available