Article
Chemistry, Physical
Shantanu Misra, Petr Levinsky, Jiri Hejtmanek, Christophe Candolfi, Bertrand Lenoir
Summary: Controlling the concentration of inherent In vacancies in InTe samples through saturation annealing has been shown to optimize its thermoelectric properties.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Chemistry, Physical
John L. Lyons
Summary: Chemical doping of lead halide perovskites shows that elements like antimony and bismuth are deep donors when incorporating on the Pb site, while elements like gallium, scandium, and yttrium are shallow donors, potentially enabling n-type conductivity.
CHEMISTRY OF MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Steve Johns, Timothy Yoder, Karthik Chinnathambi, Rick Ubic, William E. Windes
Summary: This study found that thermal annealing of nuclear graphite at 2500 degrees C can lead to the formation of fullerene-like defects, which may directly contribute to the non-recoverable physical property changes observed in irradiated nuclear graphites.
MATERIALS CHARACTERIZATION
(2022)
Article
Chemistry, Physical
Jesse A. Johnson II, Ryan Need, David Brown, Chris Hatem, Bruce Adams, Xuebin Li, Kevin S. Jones
Summary: This study investigated the relaxation mechanism of Si1-xGex/Si heterostructures under pulsed laser melting and identified surface dislocation half-loops as the primary strain relieving defects. The findings have implications for understanding the potential applications of pulsed laser melting in pMOS source/drain contact engineering.
SURFACES AND INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
C. Guillen
Summary: The crystalline structure and properties of beta-In2S3 thin films can be modified by adjusting the sulfur source pressure and heating temperature. The crystal size and bandgap energy increase with heating temperature, while the free carrier concentration and electrical conductivity decrease.
Review
Chemistry, Multidisciplinary
Seung-Young Seo, Dong-Hwan Yang, Gunho Moon, Odongo F. N. Okello, Min Yeong Park, Suk-Ho Lee, Si-Young Choi, Moon-Ho Jo
Summary: Selective doping in semiconductors is crucial for fabricating monolithic integrated circuits and tailoring their properties. Active dopants serve as point defects in the host lattice, particularly critical in atomically thin 2D transition-metal dichalcogenides due to their weaker bond dissociation energy. This Mini Review discusses recent advances in identifying diverse point defects as active dopants in 2D TMDC semiconductors towards tunable doping processes, as well as key issues in identifying such dopants at atomic and device scales.
Article
Physics, Condensed Matter
O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov, L. V. Udod, F. V. Zelenov
Summary: A sequence of structural transitions in the magnetically ordered region and a displacement-type structural transition at T = 220 K were observed in the polycrystalline compound Ho0.1Mn0.9S, accompanied by variations in thermal expansion coefficient, ultrasound attenuation coefficient, g factor, and polarization current. Electronic transitions above room temperature were also determined based on conductivity measurements, ultrasound attenuation maxima, and IR spectra.
SOLID STATE COMMUNICATIONS
(2023)
Article
Engineering, Electrical & Electronic
D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev, A. A. Nikolskaya, V. K. Vasiliev, M. N. Volochaev, N. V. Volkov
Summary: By investigating a silicon structure doped with Ga using ion implantation with admittance spectroscopy, it was found that the presence of Ga and B impurities affects the real part of impedance temperature curve, leading to a magnetoresistance effect when influenced by a magnetic field. Energy level analysis showed that the effect could be tuned by ion implantation and dopant selection.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Ying Wang, Yuen Yan Chow, Cheuk Kai Gary Kwok, Yau Fung Leung, Kin Man Yu
Summary: This study systematically investigated the properties of CdO films doped with transition metal donors Mo and W. The results showed that Mo and W can enhance the electron mobility of CdO films, and the performance of the materials can be further improved by controlling the rapid thermal annealing temperature.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Filip Anies, Mohamad I. Nugraha, Arona Fall, Julianna Panidi, Yuxi Zhao, Patrice Vanelle, Leonidas Tsetseris, Julie Broggi, Thomas D. Anthopoulos, Martin Heeney
Summary: Molecular doping using air-stable carboxylated dopant precursors has been developed to enhance the electronic properties of organic semiconductors (OSCs). The dopants can be easily generated in solution and applied to n-type organic field-effect transistors (OFETs). Experimental and computational studies reveal the decarboxylation and dimerization processes involved in the formation of active dopants. The successful improvement of device performance demonstrates the versatility of the dopants across different OSCs.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Daisuke Kato, Kouta Iwasaki
Summary: The control of Mg content in Mg2Si-based thermoelectric materials is crucial for tuning the carrier concentration. Through Mg-pressure-controlled annealing, precise control of Mg content was achieved in Mg2-delta(Si0.5Sn0.5)(1-x)Sb-x, demonstrating the impact of Mg content on carrier concentration, Seebeck coefficient, and zT values.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Review
Chemistry, Multidisciplinary
Yang Lu, Jie-Yu Wang, Jian Pei
Summary: Molecular doping is a central proposition in organic electronics, involving intermolecular charge transfer between organic conjugated materials and molecular dopants. While there is a focus on improving p-doping efficiency and electrical conductivity, the development of n-type molecular doping lags behind. Efficient p- and n-type molecular doping are both essential for organic electronic devices, emphasizing the need to achieve efficient n-doping in conjugated polymers.
ACCOUNTS OF CHEMICAL RESEARCH
(2021)
Article
Materials Science, Multidisciplinary
Yu Yamashita, Samik Jhulki, Dinesh Bhardwaj, Elena Longhi, Shohei Kumagai, Shun Watanabe, Stephen Barlow, Seth R. Marder, Jun Takeya
Summary: Chemical doping with (RuCp*Mes)(2) was demonstrated to be an effective method for producing highly stable n-doped conjugated polymers, with moderate ambient stability and preventing dopant loss in air. The study showed that sequential n-doping with organometallic dopants can lead to improved electronic properties and air stability in polymer semiconductors.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Keisuke Sagisaka, Oscar Custance, Nobuyuki Ishida, Tomonori Nakamura, Yasuo Koide
Summary: In this study, a single N vacancy on the surface of GaN has been unambiguously identified using STM and AFM techniques. The analysis reveals the electronic perturbation of a single N vacancy on the surface band structure of GaN. These results contribute to a better understanding of the impact of point defects on GaN, potentially aiding in tuning the behavior of this important material in electronic devices.
Article
Chemistry, Physical
Hao Yang, Guodong Wang, Xiaojiang Li, Jianbang Zheng
Summary: The manipulation of optical and electrical properties of lead selenide using physical vapor phase methods with an in situ oxygen ion beam preparation technique has been demonstrated. Different microstructures with tunable optical properties were observed, indicating the significant role of ion energy in controlling the properties. The results suggest that ion energy and beam current have a strong influence on the optoelectronic properties of lead selenide thin films.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Valentina Cantelli, Sophie Guillemin, Eirini Sarigiannidou, Francesco Carla, Bruno Berini, Jean-Michel Chauveau, Dillon D. Fong, Hubert Renevier, Vincent Consonni
Summary: The polarity of ZnO nanowires affects their nucleation process and morphology development. The study shows that the formation of ZnO nanowires follows three phases and the characteristics of each phase depend on the polarity of the nanowires. This research provides a deeper understanding of the physicochemical processes at work during the growth of ZnO nanowires.
Article
Chemistry, Multidisciplinary
Guislain Hector, Jako S. Eensalu, Atanas Katerski, Herve Roussel, Odette Chaix-Pluchery, Estelle Appert, Fabrice Donatini, Ilona Oja Acik, Erki Kaerber, Vincent Consonni
Summary: The dimensional optimization of ZnO/TiO2/Sb2S3 core-shell nanowire heterostructures was studied and it was found that an optimal intermediate thickness of the Sb2S3 shell results in the highest solar cell efficiency.
Article
Materials Science, Multidisciplinary
Frederic Bonell, Alain Marty, Celine Vergnaud, Vincent Consonni, Hanako Okuno, Abdelkarim Ouerghi, Herye Boukari, Matthieu Jamet
Summary: This study reports the growth of highly oriented few-layers PtSe2 on ZnO(0001) and finds that PtSe2 films grown on insulating substrate ZnO(0001) have better structural quality. Hall measurements performed on the epitaxial ZnO/PtSe2 demonstrate good semiconductor behavior and high mobility.
Article
Chemistry, Multidisciplinary
Jose Villafuerte, Eirini Sarigiannidou, Fabrice Donatini, Joseph Kioseoglou, Odette Chaix-Pluchery, Julien Pernot, Vincent Consonni
Summary: This study investigates the influence of pH on the morphology and optical properties of ZnO nanowires (NWs) grown by chemical bath deposition (CBD). It is found that increasing the pH leads to a higher density of V-Zn-nH defect complexes in ZnO NWs. Annealing at 450 degrees C under an oxygen atmosphere helps to tune the optical properties of ZnO NWs by reducing the density of H-BC and V-Zn-related defects, while activating the formation of V-Zn-N-O-H defect complexes.
NANOSCALE ADVANCES
(2022)
Article
Chemistry, Physical
Pierre Gaffuri, Tatjana Dedova, Estelle Appert, Mati Danilson, Adrien Baillard, Odette Chaix-Pluchery, Frank Guell, Ilona Oja-Acik, Vincent Consonni
Summary: Water pollution is a major ecological threat, and ZnO nanowires are being developed for heterogeneous photocatalysis as a solution. The addition of Al and Ga dopants, as well as thermal annealing, have been found to enhance the photocatalytic activity of ZnO nanowires, with the activity depending on the nature of the dopants.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Inorganic & Nuclear
Adrien Baillard, Estelle Appert, Matthieu Weber, Veronique Jacob, Herve Roussel, Laetitia Rapenne, Odette Chaix-Pluchery, Vincent Consonni
Summary: This study finds that the simultaneous co-doping of ZnO nanowires with Al and Ga in a chemical bath deposition requires specific conditions in a high-pH range, where attractive electrostatic forces drive the adsorption processes of respective Al(OH)4- and Ga(OH)4- complexes. The co-doping process is mainly influenced by Al species, and there is significant interplay between the incorporation processes of Al and Ga dopants. The incorporation of Al and Ga dopants on the surfaces of ZnO nanowires is enhanced by thermal annealing while their bulk incorporation is also observed. The Al and Ga dopants have a direct impact on the formation of hydrogen-related defects, particularly in suppressing the formation of VZn-nH defect complexes.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Multidisciplinary
Clement Lausecker, Bassem Salem, Xavier Baillin, Vincent Consonni
Summary: The formation mechanisms of ZnO nanowires from Au seed layers are investigated for different precursor concentrations, leading to variations in the morphological properties. The thermodynamic properties of the chemical bath play a critical role in the formation of ZnO nanowires. This study provides valuable insights for optimizing the morphology of ZnO nanowires for their integration into piezoelectric devices.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Chemistry, Inorganic & Nuclear
Guislain Hector, Estelle Appert, Herve Roussel, Isabelle Gelard, Vincent Consonni
Summary: The growth of GaOOH by chemical bath deposition has attracted great attention due to its potential applications in gas sensing, solar-blind UV-C photodetection, and power electronics. The structural morphology of GaOOH deposits can be tuned by adjusting the initial pH value, resulting in different dimensions, density, and nature of the deposits. These findings provide insights into the correlation between the characteristics of the chemical bath and the resulting structural morphology, offering possibilities for engineering GaOOH and Ga2O3-based materials with desired properties.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Physical
Adrien Baillard, Estelle Appert, Matthieu Weber, Veronique Jacob, Herve Roussel, Laetitia Rapenne, Odette Chaix-Pluchery, Vincent Consonni
Summary: The simultaneous cationic and anionic co-doping of ZnO nanowires with Al and Cl using one single chemical additive offers a promising way to optimize their physical properties and facilitate their integration into engineering devices. In this study, we investigate the effect of single doping with Al and Cl and extend the approach to their simultaneous co-doping. The co-doping process reveals significant interplay effects between Al(III) and Cl(I) species through competitive adsorption and incorporation processes.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Quang Chieu Bui, Vincent Consonni, Sarah Boubenia, Guillaume Gay, Corinne Perret, Mohammed Zeghouane, Sebastien Labau, Carmen Jimenez, Herve Roussel, Xavier Mescot, Gustavo Ardila, Bassem Salem
Summary: This study investigates the use of aluminum-doped zinc oxide (AZO) as an ecofriendly bottom electrode for ZnO nanowire-based mechanical energy transducers. The researchers find that the piezoelectric performance of ZnO nanowires grown on AZO thin films is higher compared to those grown on heavily doped Si substrates. They also discover that the optical transmittance of the AZO thin film/ZnO NW structure is 81.2% in the wavelength range of 400-700 nm. This research opens up possibilities for fabricating transparent piezoelectric devices using ecofriendly materials and scalable chemical deposition techniques.
ACS APPLIED NANO MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Chiara Crivello, Thomas Jalabert, Matthieu Weber, Herve Roussel, Laetitia Rapenne, Hugo Mander, Fabrice Donatini, Vincent Consonni, Gustavo Ardila, David Munoz-Rojas
Summary: Many functional devices rely on thin films deposited through physical or chemical vapour deposition methods. This study introduces the use of a volatile shape-directing agent (VSDA) to control the texture and growth rate of ZnO thin films. By adding 4-(5)-Methylimidazole (4-(5)-MeIM) during the deposition process, ZnO thin films can be grown preferentially along [001] direction, resulting in enhanced piezoelectric coefficient. The amount of VSDA used also impacts the polarity of the ZnO films. This innovative approach has potential applications in controlling texture and polarity for other functional materials.
Article
Chemistry, Physical
Jose Villafuerte, Xiaoting Zhang, Eirini Sarigiannidou, Fabrice Donatini, Odette Chaix-Pluchery, Laetitia Rapenne, Minh-Quyen Le, Lionel Petit, Julien Pernot, Vincent Consonni
Summary: Piezoelectric devices made of ZnO nanowires have attracted great interest as potential nanogenerators and sensors in the past decade. However, their characteristics are limited by the screening effect of the piezoelectric potential generated under mechanical solicitations. To address this issue, we developed the compensatory Sb doping of ZnO nanowires and achieved significant incorporation of Sb dopants.
Article
Materials Science, Multidisciplinary
Eirini Sarigiannidou, Pierre Gaffuri, Fabrice Wilhelm, Joseph Kioseoglou, Andrei Rogalev, Efstratios Nikidis, Estelle Appert, Vincent Consonni
Summary: By employing synchrotron radiation-based x-ray linear dichroism and density functional theory calculations, we investigated the local structural environment around Ga dopants in ZnO nanowires grown by chemical bath deposition. We found that the VZn-GaZn-nH defect complexes are predominantly formed, confirming hydrogen as an efficient passivating species even for intentional dopants like Ga. The residual and intentional doping processes are highly correlated through significant interplay effects. These findings provide a new understanding of intentional dopant-induced defects and defect complexes in ZnO nanowires and highlight the role of hydrogen in controlling their optical and electrical properties.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Quang Chieu Bui, Vincent Consonni, Sarah Boubenia, Guillaume Gay, Corinne Perret, Mohammed Zeghouane, Sebastien Labau, Herve Roussel, Xavier Mescot, Gustavo Ardila, Bassem Salem
Summary: The researchers have successfully optimized the growth and properties of aluminum-doped ZnO (AZO) thin films using atomic layer deposition (ALD), resulting in thin films with excellent electrical and optical properties. This is of great significance for the development of high-performance semiconductor devices.
Article
Materials Science, Multidisciplinary
Quang Chieu Bui, Gustavo Ardila, Herve Roussel, Carmen Jimenez, Isabelle Gelard, Odette Chaix-Pluchery, Xavier Mescot, Sarah Boubenia, Bassem Salem, Vincent Consonni
Summary: The research investigates the impact of O-2 gas and DEZn solution flow rates on properties of ZnO thin films, finding that the piezoelectric amplitude of ZnO thin films is significantly affected by the O-2/DEZn flow rate ratio, with Zn-polarity domains exhibiting a larger amplitude than O-polarity domains. Additionally, a comprehensive description of the formation process through different regimes is gained.
MATERIALS ADVANCES
(2022)