Article
Chemistry, Multidisciplinary
Anton Pishchagin, Frank Glas, Gilles Patriarche, Andrea Cattoni, Jean-Christophe Harmand, Fabrice Oehler
Summary: This study investigates the consumption of apical gallium droplets in the growth of GaP nanowires, revealing four channels of liquid gallium consumption. By conducting complementary experiments and detailed calculations, the dynamics of the system exposed to a constant external phosphorous flux are numerically computed. The quantitative model developed in this study can predict the changes in droplet contact angle and radius, which are crucial for controlling the crystal phase of III-V nanowires and fabricating quantum size structures.
CRYSTAL GROWTH & DESIGN
(2021)
Review
Chemistry, Multidisciplinary
Miguel Sinusia Lozano, Victor J. Gomez
Summary: Crystal phase quantum dots are formed during the axial growth of III-V semiconductor nanowires and both zinc blende and wurtzite phases can coexist in these nanowires. The ability to control crystal phase switching at the atomic level has been achieved. This review focuses on crystal phase quantum dots based on III-V nanowires and their optical and electronic properties, which are highly desirable for nanophotonics and quantum technologies.
NANOSCALE ADVANCES
(2023)
Article
Chemistry, Multidisciplinary
Vladimir G. Dubrovskii, Egor D. Leshchenko
Summary: A new model is proposed for the radial growth of self-catalyzed III-V nanowires on different substrates, which takes into account the re-emission of group III atoms and the shadowing effect in directional deposition techniques. The model accurately describes the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, providing useful insights for morphological control over III-V nanowires.
Article
Chemistry, Multidisciplinary
Egor D. Leshchenko, Jonas Johansson
Summary: This research suggests that in certain cases, the compositional independence of surface energy is crucial for the suppression of the miscibility gap, especially in the case of InAs and GaAs pairs. However, a significant difference in surface energies between the two materials may also lead to a significant modification of liquid-solid composition and complete suppression of the miscibility gap.
Article
Chemistry, Multidisciplinary
Vladimir G. Dubrovskii
Summary: In this study, an empirical approach for modeling the growth of untapered catalyst-free III-V nanowires is presented and compared to a rigorous approach based on diffusion equations. The step flow occurring on the sidewalls and top of the nanowires is studied, and the general laws governing the evolution of nanowire length and radius are derived. The model shows good correlation with the growth kinetics of SAG GaAs nanowires and self-induced GaN nanowires. This developed theory provides a basis for growth modeling of catalyst-free nanowires and can be extended to more complex nanowire morphologies.
Article
Chemistry, Physical
Linxi Wang, Xudong Qian, Yang Ren, Hairui Lei, Xiaofei Hu, Dongdong Chen, Jiongzhao Li, Xiaogang Peng
Summary: In this study, CdS shells were grown epitaxially onto monodisperse zincblende CdSe core nanocrystals by varying the volume fraction of fatty amines in the epitaxy solution. The resulting core/shell nanocrystals showed unified shape and surface ligands, and the internal lattice defects could be controlled through surface treatments. The presence of twin faults and wurtzite CdS domains did not affect the electronic structure of the nanocrystals but had an impact on the photoluminescence decay dynamics.
CHEMISTRY OF MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Vladimir G. Dubrovskii
Summary: Compositional control in III-V ternary nanowires grown through the vapor-liquid-solid method is crucial for bandgap engineering and the design of functional nanowire nano-heterostructures. The vapor-solid distribution of these nanowires is found to be kinetically controlled, while the liquid-solid distribution is in equilibrium or nucleation-limited. The developed approach, which eliminates unknown parameters and circumvents uncertainty in choosing the relevant compositional model, allows for precise compositional tuning of these nanowires.
Review
Chemistry, Multidisciplinary
Egor D. Leshchenko, Vladimir G. Dubrovskii
Summary: In this review, the modeling strategies for the growth process of III-V ternary nanowires are discussed and categorized into liquid-solid and vapor-solid approaches. The basic ideas, similarities, differences, and key factors influencing the compositions of III-V nanowires are analyzed. This review provides a foundation for selecting the most appropriate modeling approach for a specific material system and epitaxy technique.
Article
Chemistry, Physical
Trupti K. Gajaria, Narayan N. Som, Shweta D. Dabhi, Prafulla K. Jha
Summary: This article introduces the study of III-V materials, focusing on the electronic dispersion and band alignment of heterostructure nanowires. The results show that these materials have potential applications in photocatalysis and photovoltaics, and exhibit good catalytic activity in the hydrogen evolution reaction. Additionally, the nano-scale nature of these systems offers cost-effective production advantages.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2022)
Article
Chemistry, Multidisciplinary
Young Ho Song, Doo Gun Kim, Dong Wook Lee, Jeong Woo Hwang, Parsian K. Mohseni, Jae Cheol Shin, Xiuling Li
Summary: This study demonstrates the direct heteroepitaxy of III-V nanowire arrays on silicon substrates. By fabricating a micrometer-scale SiNx pattern using photolithography technique, the diameter and height of the nanowires can be controlled effectively.
CRYSTAL GROWTH & DESIGN
(2022)
Review
Chemistry, Multidisciplinary
Qinbai Yun, Yiyao Ge, Biao Huang, Qingbo Wa, Hua Zhang
Summary: The rational design and selection of ligands can modulate the phase of nanomaterials, leading to the development of phase engineering of nanomaterials (PEN). Ligands can affect the stability of different phases by modifying the surface energy of nanomaterials during wet-chemical synthesis. The use of appropriate ligands enables the synthesis of nanomaterials with unconventional phases under mild reaction conditions.
ACCOUNTS OF CHEMICAL RESEARCH
(2023)
Article
Multidisciplinary Sciences
Mingyi Chen, Peng Liu, Ji-Huan He, Hsing-Lin Wang, Haonan Zhang, Xin Wang, Rouxi Chen
Summary: This study successfully prepared nanostructured ZnO with different morphologies using electrospinning combined with thermal treatment and hydrothermal synthesis methods, showing great potential in preparing nano materials at low temperatures.
SCIENTIFIC REPORTS
(2021)
Review
Chemistry, Physical
Leilei Zhang, Xing Li, Shaobo Cheng, Chongxin Shan
Summary: This review focuses on the synthesis, fabrication, and application of III-V nanomaterials, and summarizes the structure-property relationship as well as the promising applications in energy storage field.
Article
Chemistry, Multidisciplinary
Aurelie Lecestre, Mickael Martin, Filadelfo Cristiano, Thierry Baron, Guilhem Larrieu
Summary: The paper presents a top-down approach for obtaining III-V nanowires on Si based on a thin III-V epitaxial layer. Through several complementary metal-oxide-semiconductor-compatible fabrication steps, high-quality III-V nanowires with uniform diameter were successfully fabricated. Moreover, detailed studies on the balance between plasma properties and the protective layer formation during reactive-ion etching process were conducted to control the morphology of the nanowires.
Article
Materials Science, Multidisciplinary
Vladimir G. Dubrovskii, Egor D. Leshchenko
Summary: The diffusion-induced growth process of III-V ternary materials in different geometries was investigated, and a general equation connecting the composition of ternary solid with the composition of vapor was derived. The general properties of the vapor-solid distribution were studied in relation to material constants, growth condition, and geometry, including the suppression of miscibility gaps in InGaAs and InGaN systems. The model showed good correlation with experimental data on the compositions of InGaAs, InGaP, and AlGaAs materials grown by different methods. Overall, this provides a simple analytical tool for understanding the compositional trends and tuning of III-V ternary nanostructures, applicable to Si-Ge and II-VI material systems as well.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Frank Glas, Vladimir G. Dubrovskii
PHYSICAL REVIEW MATERIALS
(2020)
Article
Nanoscience & Nanotechnology
Mohammed Zeghouane, Yamina Andre, Geoffrey Avit, Jihen Jridi, Catherine Bougerol, Pierre-Marie Coulon, Pierre Ferret, Dominique Castelluci, Evelyne Gil, Philip Shields, Vladimir G. Dubrovskii, Agnes Trassoudaine
Article
Chemistry, Multidisciplinary
Jiahui Zheng, Xin Yan, Wei Wei, Chao Wu, Nickolay Sibirev, Xia Zhang, Xiaomin Ren
Article
Chemistry, Physical
Nebile Isik Goktas, Vladimir G. Dubrovskii, Ray R. LaPierre
Summary: By adjusting the growth conditions of the InGaAs shell, different structural and morphological GaAs-InGaAs-GaAs core-shell-shell nanowire structures can be obtained. Increasing the In concentration in the InGaAs shell transitions the growth mode from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands form along the NW length. Controlling the shell growth conditions can affect the optical properties and photoluminescence emission.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Hadi Hijazi, Mohammed Zeghouane, Jihen Jridi, Evelyne Gil, Dominique Castelluci, Vladimir G. Dubrovskii, Catherine Bougerol, Yamina Andre, Agnes Trassoudaine
Summary: This study demonstrates the controlled growth of In-rich InGaN nanowires/nanorods using hydride vapor phase epitaxy, showing that different indium contents can be achieved by varying the In/Ga flow ratio. The presence of nanowires on the surface of grown NRs is proportional to the Ga content, with nanowire density reduced by increasing NH3 content. Theoretical modeling supports the idea that the emergence of nanowires is related to the final stage of growth and can be controlled by manipulating NH3 partial pressure.
Article
Physics, Condensed Matter
N. V. Sibirev, V. V. Fedorov, D. A. Kirilenko, E. V. Ubiyvovk, Y. S. Berdnikov, A. D. Bolshakov, I. S. Mukhin
Article
Chemistry, Multidisciplinary
Hadi Hijazi, Mohammed Zeghouane, Vladimir G. Dubrovskii
Summary: Silicon atoms can increase the nucleation probability of As-based alloy nanowires, but they suppress the nucleation rate of InGaN nanowires of different compositions.
Article
Chemistry, Multidisciplinary
Amnon Rothman, Jaroslav Manis, Vladimir G. Dubrovskii, Tomas Sikola, Jindrich Mach, Ernesto Joslevich
Summary: The bottom-up assembly of nanowires allows for control over their dimensions, structure, orientation, and physical properties; Surface-guided growth of planar nanowires eliminates the need for additional post-growth processes; The general growth model provides a rational approach to better control nanowire dimensions and expand the range of materials systems and potential applications in nanotechnology.
Article
Chemistry, Multidisciplinary
Vladimir G. Dubrovskii, Wonjong Kim, Valerio Piazza, Lucas Guniat, Anna Fontcuberta Morral
Summary: The study proposed a mixed approach to restrict self-assembly growth of nanomaterials in limited areas, revealing a wide distribution of nanowire diameters but mostly binary crystal phases. Additionally, it was found that thicker GaAs nanowires are zincblende phase while thinner ones are wurtzite phase, contrary to common beliefs.
Article
Nanoscience & Nanotechnology
D. P. Wilson, V. G. Dubrovskii, R. R. LaPierre
Summary: GaAs nanowire arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. The diameter of the nanowires was determined by vapor-solid growth on the sidewalls, rather than Ga pre-deposition. The maximum nanowire yield was achieved when the Ga droplet volume approximately equaled the hole volume.
Article
Chemistry, Multidisciplinary
Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Summary: The study demonstrates highly controllable self-catalyzed growth of gallium phosphide (GaP) nanowires on template-free silicon substrates, achieving a high yield of vertical GaP nanowires with control over surface density. The approach also allows for independent control of GaP nanowire length and diameter, providing a new method for designing photonic and electronic devices at the nanoscale.
Article
Energy & Fuels
Mikhail A. Mintairov, Valeriy V. Evstropov, Sergey A. Mintairov, Mariia Nakhimovich, Roman A. Salii, Maxim Z. Shvarts, Vladimir G. Dubrovskii, Nikolay A. Kalyuzhnyy
Summary: A new experimental method has been developed to obtain the resistive-less dark current-voltage (IV) characteristic of multi-junction solar cells. By measuring the dark voltage, dark current, and electroluminescence (EL) intensity of subcells, it has been found that the dark voltage logarithmically depends on the product of EL intensities of subcells in the resistive-less mode. This method has been successfully applied to a GaInP/GaAs solar cell, allowing the determination of the fundamental dark resistive-less IV characteristic.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Physics, Fluids & Plasmas
Vladimir G. Dubrovskii, Nickolay Sibirev, Andrei S. Sokolovskii
Summary: This study theoretically explores the size distributions of nanoparticles, demonstrating a correlation between size distribution and the natural variable s. The Green's function is shown to be Gaussian, with size-dependent variance. Different growth systems exhibit varying size distributions under different levels of supersaturation. The study also establishes conditions for obtaining a time-invariant distribution under different growth laws.
Article
Chemistry, Multidisciplinary
Gabin Gregoire, Evelyne Gil, Mohammed Zeghouane, Catherine Bougerol, Hadi Hijazi, Dominique Castelluci, Vladimir G. Dubrovskii, Agnes Trassoudaine, Nebile Isik Goktas, Ray R. LaPierre, Yamina Andre
Summary: In this study, long InAs nanowires (26 μm) were successfully grown on Si(111) substrate using HVPE method at a standard rate of 50 μm h(-)(1). The nanowires exhibited vertical growth along the (111)B direction with a well-faceted hexagonal shape and constant diameter. The growth temperature and III/V ratio were found to have significant effects on the growth process, with the mechanisms involving direct condensation of InCl and As-4/As-2 gaseous species being identified.
