Quantum wells formed in transition-metal dichalcogenide nanosheet-superlattices: stability and electronic structures from first principles

Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides

(2013) Yufeng Liang et al.   APPLIED PHYSICS LETTERS

Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization

(2013) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Tunable electronic and dielectric behavior of GaS and GaSe monolayers

(2013) Yandong Ma et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties

(2012) Yandong Ma et al.   ACS Nano

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Orbital Reconstruction and Interface Ferromagnetism in Self-Assembled Nanosheet Superlattices

(2011) Minoru Osada et al.   ACS Nano

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene

(2011) Yandong Ma et al.   Nanoscale

Graphene adhesion on MoS2 monolayer: An ab initio study

(2011) Yandong Ma et al.   Nanoscale

Visibility of dichalcogenide nanolayers

(2011) M M Benameur et al.   NANOTECHNOLOGY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Frictional Characteristics of Atomically Thin Sheets

(2010) C. Lee et al.   SCIENCE

Chemistry at the graphene-SiO2 interface

(2009) M. Zubaer Hossain   APPLIED PHYSICS LETTERS