Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 15, Issue 27, Pages 11231-11235Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp51156a
Keywords
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Funding
- National Natural Science Foundation of China [51172204, 51002134]
- Zhejiang Provincial Public Technology Research of China [2012C21114]
- Doctoral Fund of Ministry of Education of China [2011010110013]
- Fundamental Research Funds for the Central Universities [2012FZA4009]
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The valence band offsets (Delta E-V) of Zn1-xMgxO/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained Delta E-V values, the related conduction band offsets (Delta E-C) were deduced. All the Zn1-xMgxO/ZnO heterojunctions exhibit a type-I band alignment with the Delta E-C/Delta E-V estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn1-xMgxO/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn1-xMgxO/ZnO is helpful for designing ZnO based optoelectronic devices.
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