Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors

Title
Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors
Authors
Keywords
-
Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 13, Issue 8, Pages 3461
Publisher
Royal Society of Chemistry (RSC)
Online
2011-01-14
DOI
10.1039/c0cp01026j

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