Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 8, Issue 7, Pages 621-624Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201409100
Keywords
chemical vapor deposition; graphene; transistors
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We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-kappa dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 degrees C. Low gate leakage was maintained for prolonged exposure at 100 degrees C but increased significantly at temperatures > 200 degrees C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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