Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 7, Issue 1-2, Pages 133-135Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201206457
Keywords
topological insulators; Bi2Se3; bulk quantum Hall effect; transport
Funding
- DARPA MESO program [N66001-11-1-4107]
- CNM user research program [CNM-998]
- Office of Basic Energy Sciences, U.S. Department of Energy [DE-FG-02-05ER46200, AC03-76SF00098]
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We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly revealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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