Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells

InGaN/GaN multiple quantum well concentrator solar cells

(2010) R. Dahal et al.   APPLIED PHYSICS LETTERS

Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes

(2010) Ray-Hua Horng et al.   IEEE ELECTRON DEVICE LETTERS

Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells

(2010) Jae-Phil Shim et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration and Study of Photovoltaic Performances of InGaN p-i-n Homojunction Solar Cells

(2010) Sheng-wei Zeng et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Substrate-free large gap InGaN solar cells with bottom reflector

(2010) Chia-Lung Tsai et al.   SOLID-STATE ELECTRONICS

Favourable photovoltaic effects in InGaN pin homojunction solar cell

(2009) X.-M. Cai et al.   ELECTRONICS LETTERS

Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

(2009) Jinn-Kong Sheu et al.   IEEE ELECTRON DEVICE LETTERS

Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

(2009) B.R. Jampana et al.   IEEE ELECTRON DEVICE LETTERS

Temperature dependences of InxGa1−xN multiple quantum well solar cells

(2009) Ming-Jer Jeng et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B