Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 5, Issue 8, Pages 262-264Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201105250
Keywords
iridium; TiO2; atomic layer deposition
Funding
- MKE/IITA, Development of a mass production compatible capacitor for next generation DRAM [KI002178]
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology of Korean government [2009-0081961]
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI002178] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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TiO2 and Al-doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O-3 as the oxygen source. With increasing O-3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O-3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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