4.5 Article

Silicon-doping induced strain of AIN layers: a comparative luminescence and Raman study

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PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 2, Issue 5, Pages 215-217

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.200802155

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Si-doped aluminum nitride layers show a shift of the nearband-edge luminescence at around 6 eV to lower energies for increasing Si concentration up to approximate to(1 - 3) x 10(19) cm(-3). For higher concentrations, the luminescence shifts back to higher energies. This behavior is compared to concomitant shifts of the Raman active E-2 vibrational mode and to X-ray diffraction data. It can be explained in terms of increasing tensile strain which finally to the formation of cracks. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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