Configuration effects of superlattice-like phase change material structure

Artificial cognitive memory—changing from density driven to functionality driven

(2011) L. P. Shi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Band offsets between SiO2 and phase change materials in the (GeTe)x(Sb2Te3)1−x pseudobinary system

(2011) Lina Wei-Wei Fang et al.   APPLIED PHYSICS LETTERS

Thermal conductivity of chalcogenide material with superlatticelike structure

(2011) H. Tong et al.   APPLIED PHYSICS LETTERS

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

(2011) Duygu Kuzum et al.   NANO LETTERS

Interfacial phase-change memory

(2011) R. E. Simpson et al.   Nature Nanotechnology

Parasitic capacitance effect on programming performance of phase change random access memory devices

(2010) E. G. Yeo et al.   APPLIED PHYSICS LETTERS

Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy

(2009) Lina Wei-Wei Fang et al.   APPLIED PHYSICS LETTERS

GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory

(2009) Hongxin Yang et al.   APPLIED PHYSICS LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS