The physical principles of terahertz silicon lasers based on intracenter transitions
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Title
The physical principles of terahertz silicon lasers based on intracenter transitions
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 250, Issue 1, Pages 9-36
Publisher
Wiley
Online
2012-12-19
DOI
10.1002/pssb.201248322
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Note: Only part of the references are listed.- Multifrequency terahertz lasing from codoped silicon crystals
- (2011) S. G. Pavlov et al. APPLIED PHYSICS LETTERS
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- Influence of an electric field on the operation of terahertz intracenter silicon lasers
- (2010) S. G. Pavlov et al. JOURNAL OF APPLIED PHYSICS
- Ge-on-Si laser operating at room temperature
- (2010) Jifeng Liu et al. OPTICS LETTERS
- Theoretical intrinsic lifetime limit of shallow donor states in silicon
- (2010) Valeriy Tyuterev et al. PHYSICAL REVIEW B
- Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe
- (2010) S. A. Lynch et al. PHYSICAL REVIEW B
- Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
- (2009) S. G. Pavlov et al. APPLIED PHYSICS LETTERS
- Stimulated terahertz emission due to electronic Raman scattering in silicon
- (2009) S. G. Pavlov et al. APPLIED PHYSICS LETTERS
- Optimizing the Operation of Terahertz Silicon Lasers
- (2009) S.G. Pavlov et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Raman lasers due to scattering on donor electronic resonances in silicon
- (2009) Sergey G. Pavlov et al. PHYSICA B-CONDENSED MATTER
- Terahertz Raman laser based on silicon doped with phosphorus
- (2008) S. G. Pavlov et al. APPLIED PHYSICS LETTERS
- Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon
- (2008) S. G. Pavlov et al. PHYSICAL REVIEW B
- Silicon as a model ion trap: Time domain measurements of donor Rydberg states
- (2008) N. Q. Vinh et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Relaxation of excited donor states in silicon with emission of intervalley phonons
- (2008) V. V. Tsyplenkov et al. SEMICONDUCTORS
- Multi-crystalline silicon as active medium for terahertz intracenter lasers
- (2007) S.G. Pavlov et al. PHYSICA B-CONDENSED MATTER
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