Periodically arranged Si nanostructures by glancing angle deposition on patterned substrates

Using glancing angle deposition (GLAD) by ion beam sputtering of Si on differently patterned substrates, periodically arranged Si nanostructures were obtained. Patterns with tetragonal, honeycomb-like, and hexagonally closed packed (hcp) arrangement of the artificial seeds for the subsequent deposition at oblique particle incidence were used to demostrate the influence of the pattern periodicity, the inter-seed distances, and other deposition parameters on the growth and morphological evolution of the Si nanostructures.