4.3 Article

Ab initio study of GaN periodically substituted by transition metal for intermediate band materials

Journal

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 248, Issue 4, Pages 964-968

Publisher

WILEY-BLACKWELL
DOI: 10.1002/pssb.201046474

Keywords

ab initio calculations; deep levels; density of states; GaN; intermediate bands; transition metals

Funding

  1. National Natural Science Foundation of China [50706022]
  2. '863' High Technology Program of China [2007AA05Z429]
  3. State Key Lab of Integrated Optoelectronics of China [IOSKL-KF200915]

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The electronic and optical properties of Ga(x-1)(TM)N(x) materials, where TM is the transition metal Sc, Ti, V, Cr, Mn and Fe, are studied with density functional theory to survey the candidates of intermediate band (IB) material. The result shows that the sub-band formed in the GaN band gap moves from the conduction band (CB) towards the valence band (VB) as the atomic number of TM increases, and its width becomes larger with the increase of TM concentration. Ga(7)MnN(8), Ga(7)FeN(8), Ga(15)MnN(16) and Ga(15)FeN(16) exhibit partially filled IBs that are completely isolated from the CB and the VB. The absorption coefficient in sub-band-gap energy is greatly improved by the induction of the IB compared to the GaN host. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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