Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 245, Issue 7, Pages 1337-1355Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200844055
Keywords
-
Categories
Ask authors/readers for more resources
We present a review of recent photoluminescence, cathodoluminescence and micro-photoluminescence studies that have been made to investigate the electronic properties of as-grown and/or process-induced stacking faults (SFs) in silicon carbide (SiC) epitaxial layers. For different polytypes and different acquisition conditions, we discuss the optical signature and compare with the results of model calculations. Since a SF is always a finite lamella of 3C or 8H polytype in a 4H or 6H matrix, we take successively into account the effect of the valence band offsets, internal polarizations and non-homogeneity of the potential wells. In the case of cathodoluminescence and micro-photoluminescence techniques, due to the higher pumping level, we show that some screening of the built-in electric field can be reached. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available