Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 211, Issue 7, Pages 1550-1554Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201330422
Keywords
chemical vapor deposition; electron microscopy; field emission; nanostructures; SiC
Funding
- National Natural Science Foundation of China [51272117, 51172115, 50972063]
- Natural Science Foundation of Shandong Province [ZR2011EMZ001, ZR2011EMQ011]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20123719110003]
- Application Foundation Research Program of Qingdao [13-1-4-117-jch]
- Tackling Key Program of Science and Technology in Shandong Province [2012GGX10218]
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beta-SiC nanowires (SiC NWs) were modified by H-2 and N-2 plasma treatment for improving the field-emission (FE) properties. The FE property of SiC NWs treated by H-2 and N-2 plasma was significantly improved, their turn-on field and threshold field were 3.2 and 6.7 V mu m(-1) for a 10-min H-2 treatment, 3.0 and 6.3 V mu m(-1) for a 20-min H-2 treatment, and 2.8 and 6.0 V mu m(-1) for a 10-min N-2 treatment, respectively, while SiC NWs treated by N-2 for 20 min displayed poorer FE properties compared with untreated SiC NWs. The results of scanning electron microscope (FE-SEM), transmission electron microscopy, high-resolution transmission electron microscopy, selected-area electronic diffraction, and X-ray diffraction showed that the surface of the SiC NWs became rough, but their microstructure did not change after the plasma treatments. The point effect was proposed to explain the improvement of FE properties. A new, simple, and effective method for improving SiC NWs FE properties was discovered, and it may serve as a referential work for enhancing FE properties of other one-dimensional nonmaterials. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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