Anisotropy of the electron effective mass in rutile SnO2determined by infrared ellipsometry

Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface

(2012) Oliver Bierwagen et al.   JOURNAL OF MATERIALS RESEARCH

Phonon anharmonicity of rutile SnO2studied by Raman spectrometry and first principles calculations of the kinematics of phonon-phonon interactions

(2012) Tian Lan et al.   PHYSICAL REVIEW B

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

(2011) A. Schleife et al.   PHYSICAL REVIEW B

Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2

(2010) Mark E. White et al.   Applied Physics Express

Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy

(2009) M. E. White et al.   JOURNAL OF APPLIED PHYSICS

Influence of strain on the band gap energy of wurtzite InN

(2009) P. Schley et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

(2009) Stephan Lany et al.   PHYSICAL REVIEW B

Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire

(2008) M. E. White et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy

(2008) V. Darakchieva   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE