Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 209, Issue 3, Pages 491-496Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201100452
Keywords
GaN; HEMT; MMIC; reliability
Funding
- German Federal Ministry of Defense (BMVg), NXP
- Federal Ministry of Education and Research (BMBF)
- Federal Office of Defense Technology and Procurement (BWB)
- Bundeswehr Technical Center for Information Technology and Electronics [WTD 81]
- European Space Agency
Ask authors/readers for more resources
We present the current status of our technology for GaN-based HEMTs and MMICs as well as results ranging from the L-band up to the W-band. Epitaxial growth is carried out on 4H-SiC(0001) substrates by both MOCVD and MBE. Processing is done using standard III-V equipment including both frontside and backside processing. For L-band power bars we arrive at output powers, efficiencies and gains beyond 100 W, 60% and 17 dB, all measured under cw conditions at 50 V drain bias. The X-band MMICs are characterized by a high efficiency above 40% for two-stage amplifiers. Towards mm-wave applications we have fabricated HEMTs with transit frequencies above 100 GHz and W-band MMICs delivering 0.5W/mm at 94 GHz with 7% PAE. First quaternary InAlGaN barriers show promising results for this new materials system. Reliability tests return a very good long-term stability of our devices even at an elevated channel temperature of 200 degrees C with an extrapolated lifetime of 5 x 10(5). Initial space capability tests including total ion dose radiation insensitivity, radiation displacement damage, hydrogen poisoning and single event effect are successfully passed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available