Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 208, Issue 4, Pages 951-954Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssa.201026557
Keywords
GaN; high-electron mobility transistors; molecular beam epitaxy; ohmic contacts; PAMBE; selective area growth
Funding
- Grainger Center for Electric Machinery and Electromechanics of the University of Illinois
- US Department of Energy [DEF02-91-ER45439]
- China Scholarship Council
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Selective area growth (SAG) based on plasma assisted molecular beam epitaxy (PAMBE) was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic metals. An AlGaN/GaN high-electron mobility transistor (HEMT) using SAG by PAMBE with nonalloyed ohmic metals and recessed drain/source structure exhibited a low specific contact resistance of 3.7 x 10(-5) Omega cm(2), high-peak drain current of 604 mA/mm, and small gate leakage current of 3.4 mu A. These results demonstrate that SAG by PAMBE produces nonalloyed HEMT with comparable or more favorable electric performance versus conventional alloyed counterpart while avoiding problems of the latter resulting from high-temperature annealing. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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