4.4 Article

Site-selective anodic etching of InP substrate using self-organized spheres as mask

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Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200925595

Keywords

etching; semiconductor nanostructures; self-assembly

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Ordered microstructures were formed on an InP substrate by metal-assisted chemical etching or anodic etching using a layer of colloidal crystals consisting of polystyrene spheres as a mask. When the metal-assisted chemical etching of the InP substrate was carried out in a mixed solution of H2SO4/H2O2 using a Pt honeycomb pattern as a catalyst, obtained by ion sputtering through the mask on the substrate, InP column arrays with a close-packed configuration having an ordered periodicity were formed. Furthermore, by anodic etching at the optimum HCl concentration with a layer of colloidal crystals as a mask, InP disk arrays or pillar arrays were fabricated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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