Pressure sensitive organic field effect transistor

Thin films of organic semiconductor copper phthalocyanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of pressure on the properties of the fabricated field effect transistor (FET) with metal (aluminum) - semiconductor (copper phthalocyanine) Schottky junction was investigated. It was observed that the drain-source resistance of this organic field effect transistor (OFET) decreased with pressure. (C) 2010 Elsevier B.V. All rights reserved.