The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell

Published 2010 View Full Article

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Title
The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell
Authors
Keywords
-
Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 42, Issue 9, Pages 2353-2357
Publisher
Elsevier BV
Online
2010-05-22
DOI
10.1016/j.physe.2010.05.014

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