Journal
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS
Volume 468, Issue 7-10, Pages 793-796Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physc.2007.11.049
Keywords
electron-beam lithography; lift-off; etching; superconductivity; thin films; critical-current; vortex barrier
Categories
Ask authors/readers for more resources
We report about a process that enables us to manufacture nm-sized structures that are characterized in a four-point resistivity measurement. To define the nanostructures, we employ either a lift-off deposition process or a dry etching process. With the lift-off deposition, we were able to define line widths below 15 nm spatial dimension. The same technique allowed the fabrication of a current-carrying bridge with approximate to 30 nm x 10 nm cross section. The etch-process step allowed us to generate a superconducting meander structure covering an area of approximate to 13.5 mu m x 10.5 mu m. We also present critical-current measurements vs. temperature on sub-mu m and pm sized bridges prepared by a different technique. These data support the idea of a geometrical edge barrier for vortex entry into sub-Pm wide bridges. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available