Journal
PHYSICA B-CONDENSED MATTER
Volume 407, Issue 13, Pages 2382-2384Publisher
ELSEVIER
DOI: 10.1016/j.physb.2012.03.026
Keywords
B-C thin film; Pulsed laser deposition; Stoichiometry; Deposition rate; XPS (X-ray photoelectron spectroscopy)
Categories
Funding
- National Natural Science Foundation of China [51102101]
Ask authors/readers for more resources
The stoichiometry of B-C thin films was controlled via pulsed laser deposition using a series of ceramic B-C targets (B/C ratio was 3.04-5.92). The effects of B/C ratio in target, laser power and substrate-to-target distance on deposition rate, microstructure, stoichiometry and chemical structure were investigated. The maximum deposition rate was obtained at laser power of 90 mJ and substrate-to-target distance of 50 mm. Boron rich B-C films were obtained and the stoichiometry in B-C thin films was controlled in the range 2.9-4.6. Carbon atoms were bonded with only sp(3) hybridization when boron was rich,but with sp(2) and sp(3) hybridizations when carbon was rich. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available