Simulation of IPV effect in In-doped c-Si with optimized indium concentration and layer thickness

Published 2011 View Full Article

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Title
Simulation of IPV effect in In-doped c-Si with optimized indium concentration and layer thickness
Authors
Keywords
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Journal
PHYSICA B-CONDENSED MATTER
Volume 406, Issue 22, Pages 4221-4226
Publisher
Elsevier BV
Online
2011-08-22
DOI
10.1016/j.physb.2011.07.064

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