Journal
PHYSICA B-CONDENSED MATTER
Volume 405, Issue 3, Pages 996-998Publisher
ELSEVIER
DOI: 10.1016/j.physb.2009.10.040
Keywords
Algan; Schottky; MSM
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Al0.25Ga0.75N ultraviolet (UV) photodetector was fabricated on Al2O3 by metal organic chemical vapor deposition (MOCVD). Based on the Al0.25Ga0.75N epitaxial layer, planar geometry Schottky type metal-emiconductor-metal (MSM) photodetector was fabricated. The device shown very low dark current about 20 pA at 1 V bias, and the photocurrent/dark current rejection is more than five orders of magnitude. At I V bias, the peak responsivity of 0.07 A/W was achieved at 308 nm, corresponding to the cletectivity about 4.43 x 10(11) cm Hz(1/2)/W. Published by Elsevier B.V.
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