Journal
PHYSICA B-CONDENSED MATTER
Volume 405, Issue 10, Pages 2423-2426Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2010.02.058
Keywords
Raman scattering; Silicon carbide crystal; Doping
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Funding
- 863 Project [2006AA03A146]
- Chinese Academy of Sciences [KGCX2-YW-206]
- Natural Science Foundation of Shanghai [06ZR14096]
- Science and Technology Commission of Shanghai Municipality [09DZ1141400, 09520714900]
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Raman spectra of Al- and N-doped 6 H-SiC crystal samples with different doping levels were measured. The first-order Raman spectra of the samples were shifted to higher frequency when the doping concentrations were increased. Compared with Al-doped samples, the intensity of AI longitudinal optical mode of N-doped ones changed obviously, which reflected the different doping concentrations. The second-order Raman spectra were not dependent on the doping types and concentrations. (C) 2010 Elsevier B.V. All rights reserved.
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