Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability

C-60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C-60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm(2) V-1 s(-1) to 2.92 cm(2) V-1 S-1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C-60 OTFTs. A grazing incidence X-ray diffraction and ultra-high-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C-60 film due to increased (1 1 1) orientation of C-60-grains and their crystallinity on the DIP template. (C) 2014 Elsevier B.V. All rights reserved.