Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics

Published 2012 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 14, Issue 2, Pages 505-510
Publisher
Elsevier BV
Online
2012-12-02
DOI
10.1016/j.orgel.2012.10.035

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.